Comparison of transparent conductive indium tin oxide, titanium-doped indium oxide, and fluorine-doped tin oxide films for dye-sensitized solar cell application
نویسندگان
چکیده
منابع مشابه
Dye-Sensitized Nanostructured Crystalline Mesoporous Tin-doped Indium Oxide Films with Tunable Thickness for Photoelectrochemical Applications.
A simple route towards nanostructured mesoporous Indium-Tin Oxide (templated nano-ITO) electrodes exhibiting both high conductivities and optimized bicontinuous pore-solid network is reported. The ITO films are first produced as an X-ray-amorphous, high surface area material, by adapting recently established template-directed sol-gel methods using Sn(IV) and In(III) salts. Carefully controlled ...
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The front transparent conductive oxide layer is a source of significant optical and electrical losses in silicon heterojunction solar cells because of the trade-off between free-carrier absorption and sheet resistance. We demonstrate that hydrogen-doped indium oxide (IO:H), which has an electron mobility of over 100 cm/V s, reduces these losses compared to traditional, low-mobility transparent ...
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Well-ordered 3D mesoporous indium tin oxide (ITO) films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO) on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs). Mesoporous ITO film were dip-coated with pore sizes of 2...
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We prepared of electrodes that consist of TiO2 with addition of tin-doped indium oxide (ITO) or fluorine-doped tin oxide (FTO) nanoparticles and the application of such electrodes on dye-sensitized solar cell. As compared to TiO2 alone, the addition of ITO and FTO nanoparticles resulted in an efficiency improvement of ~ 20% up to ~ 54% for the TiO2ITO and TiO2-FTO systems, respectively. This im...
متن کاملMorphology-Controlled Indium Oxide Nanostructures that Grow Vertically on Fluorine-Doped Tin Oxide
heat treated In2O3 nanowalls using FULLPROF. [1] A Thompson-Cox-Hastings pseudo-Voigt profile function was used to simulate the In2O3 as well as the SnO2 phase resulting from the FTO substrate. Preferred orientation has been taken into account in all refinements. The final Rietveld refinement plots are shown in Figure 2c-d in the main text. The FTO substrate in both patterns showed a strong pre...
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ژورنال
عنوان ژورنال: Journal of Electrical Engineering and Technology
سال: 2011
ISSN: 1975-0102
DOI: 10.5370/jeet.2011.6.5.684